 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APM7312 Dual N-Channel Enhancement Mode MOSFET Features * 20V/6A , RDS(ON)=35m(typ.) @ VGS=10V RDS(ON)=45m(typ.) @ VGS=4.5V RDS(ON)=110m(typ.) @ VGS=2.5V Pin Description SO-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 * * * Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Top View D1 D1 D2 D2 Applications * Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 G2 Ordering and Marking Information APM7312 Handling Code Tem p. Range Package Code S1 S2 N-Channel MOSFET Package Code K : SO-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel APM 7312 K : APM 7312 XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating 20 16 6 20 A V Unit Maximum Drain Current - Continuous Maximum Drain Current - Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t 10 sec. APM7312 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TA=25C TA=100C TJ TSTG RjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient (TA = 25C unless otherwise noted) Rating 2.5 1.0 150 -55 to 150 50 W C C C/W Unit * Surface Mounted on FR4 Board, t 10 sec. Electrical Characteristics Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON) a V SD a (TA = 25C unless otherwise noted) APM7312 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage V GS =0V , IDS=250A V DS =18V , V GS =0V V DS =V GS , IDS=250A V GS =16V , V DS =0V V GS =10V , IDS =6A V GS =4.5V , IDS =4A V GS =2.5V , IDS =2A ISD =1.7A , VGS =0V V DS =10V , IDS = 6A V GS =4.5V , 20 1 0.7 0.9 35 45 110 0.7 12 3 4.5 6 12 10 40 20 1.5 100 40 54 120 1.3 16 V A V nA m V Dynamic b Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC V DD =10V , IDS =1A , V GEN =4.5V , R G =0.2 V GS =0V V DS =15V 5 16 5 450 100 60 ns pF Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 2 www.anpec.com.tw APM7312 Typical Characteristics Output Characteristics 20 VGS=4,5,6,7,8,9,10V Transfer Characteristics 20 ID-Drain Current (A) 16 ID-Drain Current (A) 15 12 VGS=3V 10 8 TJ=25C 5 TJ=125C 4 VGS=2V TJ=-55C 0 0 1 2 3 4 5 6 7 8 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.08 RDS(ON)-On-Resistance () VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.07 0.06 VGS=4.5V 0.05 0.04 0.03 0.02 0.01 VGS=10V -25 0 25 50 75 100 125 150 0.00 0 5 10 15 20 Tj - Junction Temperature (C) ID - Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 3 www.anpec.com.tw APM7312 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.10 ID=6A On-Resistance vs. Junction Temperature 2.00 VGS=4.5V 1.75 ID=6A RDS(ON)-On-Resistance () 0.08 RDS(ON)-On-Resistance () (Normalized) 1.50 1.25 1.00 0.75 0.50 0.25 0.06 0.04 0.02 0.00 1 2 3 4 5 6 7 8 9 10 0.00 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 5 VDS=10V ID=6A Capacitance 750 625 Frequency=1MHz VGS-Gate-Source Voltage (V) 4 Capacitance (pF) 500 375 250 125 0 Ciss 3 2 1 Coss Crss 0 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 4 www.anpec.com.tw APM7312 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 20 80 Single Pulse Power IS-Source Current (A) 10 60 Power (W) TJ=150C TJ=25C 40 20 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 1 10 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedance, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA SINGLE PULSE D=0.02 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 5 www.anpec.com.tw APM7312 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8 Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 6 www.anpec.com.tw APM7312 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 7 www.anpec.com.tw APM7312 Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application SOP-8 Application SOP-8 A 3301 F 5.5 0.1 B 62 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 0.1 T2 2 0.2 Ao 6.4 0.1 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1 D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1 Ko t 2.1 0.1 0.30.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 8 www.anpec.com.tw APM7312 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 9 www.anpec.com.tw |
Price & Availability of APM7312KC-TR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |